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| Transys Electronics LIMITED TO-92 Plastic-Encapsulated Transistors 2N6517 FEATURES Power dissipation 1. EMITTER TRANSISTOR (NPN) TO-92 PCM : 625 mW (Tamb=25) 2. BASE Collector current : 500 mA ICM Collector-base voltage V V(BR)CBO : 350 Operating and storage junction temperature range TJ, Tstg: -55 to +150 3. COLLECTOR 123 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) DC current gain hFE(3) hFE(4) hFE(5) VCE(sat)(1) Collector-emitter saturation voltage VCE(sat)(2) VCE(sat)(3) VCE(sat)(4) VBE(sat)(1) Base-emitter saturation voltage VBE(sat)(2) VBE(sat)(3) Base-emitter voltage Transition frequency Collector output capacitance VBE unless otherwise specified) Test conditions MIN TYP MAX UNIT V V V Ic=100 A, IE=0 Ic=1 mA, IB=0 IE= 10 A, IC=0 VCB=250 V, IE=0 VEB=5 V, IC=0 VCE=10 V, IC=1 mA VCE=10 V, IC=10 mA VCE=10 V, IC=30 mA VCE=10V, IC=50 mA VCE=10V, IC=100 mA IC=10 mA, IB=1 mA IC=20 mA, IB=2 mA IC=30 mA, IB=3 mA IC=50 mA, IB=5 mA IC=10 mA, IB=1 mA IC=20 mA, IB=2 mA IC=30 mA, IB=3 mA VCE= 20V, IC=10 mA VCE=10 V, IC=100 mA VCB=20 V, IE=0, f=1 MHz 350 350 6 50 50 20 30 30 20 15 0.3 0.35 0.5 1 0.75 0.85 0.9 40 200 6 nA nA 200 200 V V V V V V V fT Cob MHz pF |
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